Last edited by Grogore
Saturday, August 8, 2020 | History

5 edition of Oxide Reliability found in the catalog.

Oxide Reliability

A Summary of Silicon Oxide Wearout, Breadown, and Reliability (Selected Topics in Electronics and Systems)

by D. J. Dumin

  • 342 Want to read
  • 19 Currently reading

Published by World Scientific Publishing Company .
Written in English

    Subjects:
  • Materials science,
  • Semi-conductors & super-conductors,
  • Reliability,
  • General,
  • Technology,
  • Technology & Industrial Arts,
  • Science/Mathematics,
  • Electronics - Semiconductors,
  • Engineering - Electrical & Electronic,
  • Material Science,
  • Deterioration,
  • Metal oxide semiconductors,
  • Silicon oxide

  • The Physical Object
    FormatHardcover
    Number of Pages280
    ID Numbers
    Open LibraryOL9195457M
    ISBN 109810248423
    ISBN 109789810248420

    Initially developed by the aviation industry, RCM is rapidly becoming fundamental to the practice of maintenance management and is now in use at hundreds of industrial and service organizations around the world. This book provides an authoritative and practical explanation of what RCM is and how it can be applied. It is of vital importance to anyone concerned with productivity, quality, safety /5(7). 10Gb oxide isolated VCSEL reliability model improvement in operating lifetime is described. INTRODUCTION For ten years AOC has been intensively studying and improving VCSEL reliability. The earliest reliability studies on commercially available VCSELs were published by AOC (Honeywell at that time) starting in on proton-implanted Size: KB.

    oxide VCSEL reliability must be assessed for each particular oxide design, and the reliability effects of design choices must be understood through extensive reliability testing. As with proton VCSELs, AOC continues to emphasize reliability performance for its oxide VCSEL products. By systematicallyFile Size: KB. Abstract: In the present work, we studied the influence of the post-implantation annealing temperature on the performance and oxide reliability of lateral 4H-SiC MOSFETs. The maximum field effect mobility of the MOSFETs at 25°C decreases from cm 2 /Vs to cm 2 /Vs by increasing annealing temperature from °C to °C.

    In order to address these issues, extensive physical modeling of silicon dioxide breakdown has been carried out to date. This chapter presents the current understanding about gate oxide intrinsic reliability, and discusses the resulting reliability projections. A number of models have been proposed, but a comprehensive model is still by: title = "Gate oxide reliability and deuterated CMOS processing", abstract = "In recent literature, a controversy has arisen over the question whether deuterium improves the stability of Author: A.J. Hof, A. Kovalgin, R. van Schaijk, W.M. Baks, J. Schmitz.


Share this book
You might also like
Pate collection of Abraham Lincoln

Pate collection of Abraham Lincoln

Paul Outerbridge, a singular aesthetic

Paul Outerbridge, a singular aesthetic

Clinical pharmacokinetics

Clinical pharmacokinetics

Six leadership principles from the Gospels

Six leadership principles from the Gospels

The Organic Classroom

The Organic Classroom

Racism and casteism

Racism and casteism

On early learning: the modifiability of human potential

On early learning: the modifiability of human potential

Encyclopedia of sex education

Encyclopedia of sex education

Our needy aged

Our needy aged

Microscopic theory of collective resonances of light nuclei

Microscopic theory of collective resonances of light nuclei

Mercy

Mercy

The friendly young ladies

The friendly young ladies

Oxide Reliability by D. J. Dumin Download PDF EPUB FB2

The book will be an invaluable aid to reliability engineers and manufacturing engineers, helping them to produce and characterize reliable oxides. It can be used as an introduction for new engineers interested in Oxide Reliability book reliability, besides being a reference for engineers already engaged in the field.5/5(1).

reliability of the film. The maximum acceptable gate leakage has been suggested to be between 1 A/cm and 10 A/cm [1], [2]. This corresponds to Oxide Reliability book oxide thickness between nm and nm [2]. How-ever, another concern is that intrinsic reliability (oxide wear-out and eventual breakdown) may limit the further scaling of oxide thickness.

Find helpful customer reviews and review ratings for Oxide Reliability: A Summary of Silicon Oxide Wearout, Breadown, and Reliability (Selected Topics in Electronics and Systems) at Read honest and unbiased product reviews from our users.5/5.

Oxide wearout, breakdown, and reliability, D.J. Dumin; reliability of flash nonvolatile memories, N. Mielke and J. Chen; physics and chemistry of intrinsic time-dependent dielectric breakdown in SiO2 dielectrics, J.W.

McPherson; breakdown modes and breakdown statistics of ultrathin SiO2 gate oxides, J. Sune et al; MOSFET gate oxide reliability.

Get this from a library. Oxide reliability: a summary of silicon oxide wearout, breakdown, and reliability. [D J Dumin;] -- Annotation This book presents in summary the state of our knowledge of oxide reliability. The articles have been written by experts who are among the.

Solid Oxide Fuel Cell Lifetime and Reliability: Critical Challenges in Fuel Cells presents in one volume the most recent research that aims at solving key issues for the deployment of SOFC at a commercial scale and for a wider range of applications.

To achieve that, authors from different regions and backgrounds address topics such as. 5 Books for a Professional Reliability Engineer A part of preparation for the ASQ CRE is experience and education. These, in my simple way of thinking, means applying what you have learned to solve problems and provide : Fred Schenkelberg.

The book will be an invaluable aid to reliability engineers and manufacturing engineers, helping them to produce and characterize reliable oxides. It can be used as an introduction for new engineers interested in oxide reliability, besides being a reference for engineers already engaged in.

Where Reliability Professionals Go for Knowledge. We offer a body of knowledge encompassing the latest in publications, multi-media and full-length distance learning courses, allowing our customers to prosper in today's world of increased performance requirements.

As the gate-oxide is scaled down, breakdown of the oxide and oxide reliability becomes more of a concern. Higher fields in the oxide increase the tunneling of carriers from the channel into the oxide.

These carriers slowly degrade the quality of the oxide and lead over time to failure of the oxide. Probability, Statistics, and Decision for Civil Engineers By: Jack R Benjamin, C.

Allin Cornell. C-axis aligned crystalline (CAAC) IGZO enables aggressive down-scaling, high reliability, and process simplification of transistors in displays and LSI devices.

This original book introduces the CAAC-IGZO structure, and describes the physics and technology of this new class of oxide materials. PDF | Onand others published Combined Vramp and TDDB Analysis for Gate Oxide Reliability Assessment and Screening | Find, read and cite all the research you need on.

Solid Oxide Fuel Cell Lifetime and Reliability: Critical Challenges in Fuel Cells presents in one volume the most recent research that aims at solving key issues for the deployment of SOFC at a commercial scale and for a wider range of applications.

To achieve that, authors from different regions and backgrounds address topics such as electrolytes, contaminants, redox cycling, gas-tight seals. Roussel, G. Groeseneken, H.E. Maes, “A new analytic model for the description of the intrinsic oxide breakdown statistics of ultrathin oxides”, Microelectronics and Reliability (Proc.

ESREF) 36, no. 11/12, pp. –, Google ScholarCited by: 2. The minimum amounts of H 2 O essential to prevent carbon deposition are shown in Fig. A for hydrocarbons and Fig. B for alcohols. While S/C (steam:carbon ratio) of is enough for CH 4, higher S/C is needed with increasing carbon number of alcohols, less H 2 O is needed at elevated temperatures.

It has been found that the major constituents in fuel gases are H 2 (g), H Cited by: 1. have to be run through the process and get characterized (e.g., hot-carrier lifetime, electromigration, and oxide integrity, etc.).

Qualification and Product Development During this phase of development, the wafer process and package technology are defined and frozen. A product vehicle for Power Semiconductor Reliability HandbookFile Size: KB. 4 Metal oxide varistor reliability model By analysing the behaviour of a MOV, three states have been identified (f ig.

Figure 3: Reliability model of a MOV. It also offers the first reference book with all relevant physics, equations, and step-by-step procedures for CMOS technology reliability in one place. Practical appendices provide basic experimental procedures that include experiment design, performing stressing in the laboratory, data analysis, reliability projections, and interpreting.

Solid Oxide Fuel Cell Lifetime and Reliability: Critical Challenges in Fuel Cells presents in one volume the most recent research that aims at solving key issues for the deployment of SOFC at a commercial scale and for a wider range of applications.

To achieve that, authors from different regions and backgrounds address topics such as electrolytes, contaminants, redox cycling, gas-tight seals Brand: Elsevier Science. Five topics will be discussed: oxide breakdown, oxide leakage currents, trap generation, statistics, and reliability.

An early model of oxide breakdown, developed by Klein and Solomon, will be described and will be shown to be generally applicable to oxide manufactured. Abstract: We present a gate oxide breakdown analysis method that uses an effective oxide thickness model combined with Time-Dependent Dielectric Breakdown (TDDB) model parameters to assess the reliability of extrinsic gate oxide defects.

The method transforms gate breakdown voltage (Vbd), obtained from voltage ramp-to-breakdown measurements, into effective oxide thickness (teff) .Title: Microsoft Word - Author: llevine Created Date: 2/9/ AM.